參數(shù)資料
型號(hào): FU-68SDF-810M85B
廠(chǎng)商: Mitsubishi Electric Corporation
英文描述: Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 0.01uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 1805; Termination: 100% Tin (Sn); Body Dimensions: 0.180" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate
中文描述: 1.55微米半導(dǎo)體激光器與單模光纖尾纖(波長(zhǎng)選擇,偏置電路集成的數(shù)字應(yīng)用模塊)
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 109K
代理商: FU-68SDF-810M85B
MITSUBISHI (OPTICAL DEVICES)
FU-68SDF-V810MxxB
1.55
m
m DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL
(WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)
ELECTRICAL/OPTICAL CHARACTERISTICS
(Tld=Tset, Tc=25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Limits
Typ.
10
-
Unit
Min.
-
-
Max.
25
150
Threshold current
Optical output power
at threshold current
Operating current
Operating voltage
Input impedance
Light-emission central
wavelength
Central wavelength drift with
case temp.
Laser operating temperature
Spectral width
Side mode suppression ratio
Dispersion penalty
Ith
Pth
CW
CW, If=Ith
mA
m
W
Iop
Vop
Zin
l
c
CW, Pf=10mW
CW, Pf=10mW
Pf=10mW
(Note 1)
-
-
-
50
1.3
25
95
1.8
-
mA
V
W
nm
(Note 2)
Dl
c/
D
Tc
Tc=-20~70
°
C
-1
-
0
pm/
°
C
Tset
-
(Note 1), -20dB
(Note 1)
(Note 1), at 10
-10
BER,
+1800ps/nm
Pf=10mW
20
-
33
-
-
35
0.4
-
2
°
C
nm
dB
dB
Dl
Sr
Pp
0.2
40
-
Cutoff frequency
(-1.5dB optical)
Rise and fall time
(10~90%)
Relative intensity noise
fc
3.5
-
-
GHz
tr, tf
(Note 1)
-
-
150
psec
Nr
CW, Pf=10mW,
0.5~3GHz
Tc=-20~70
°
C,
APC, ATC
CW, Pf=10mW
-
-155
-145
dB/Hz
Tracking error
(Note 3)
Differential efficiency
Er
-
-
0.5
dB
h
0.15
0.25
0.35
mW/
mA
%
Linearity
Dh
CW, Pf=1~12mW,
(Note 4)
CW, Pf=10mW, Vrd=5V
Tc=25
°
C
Tc=-20~70
°
C
Vrd=5V, Tc=-20~70
°
C
Vrd=5V, f=1MHz
-20
-
20
Monitor current
Optical isolation
Imon
Iso
0.2
35
23
-
-
-
-
-
-
-
3
-
-
mA
dB
Dark current (PD)
Capacitance (PD)
Note 1) 2.48832Gb/s NRZ, 2
23
-1, Pf_ave=5mW, Extinction ratio 10dB, optical return loss of the connectors should
be greater than 40dB in order to ensure the specified performance.
Note 2) See Table 1.
Note 3) Er=max|10
log(Pf / Pf@25
°
C)|
Note 4) Variation of the differential efficiency from the straight line between 1mW and 10mW.
Id
Ct
0.1
10
m
A
pF
相關(guān)PDF資料
PDF描述
FU-68SDF-810M89B Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 0.01uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 1805; Termination: Sn60 Coated; Body Dimensions: 0.180" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate
FU-68SDF-V810MXXB 1.55 um DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)
FU-68SDF-V810MXXXB 1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)
FU-68SDF-810M95B 1.55 um DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)
FU-68SDF-810M93B 1.55 um DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)
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FU-68SDF-810M87B 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:1.55 um DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)
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FU-68SDF-810M95B 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:1.55 um DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)