參數(shù)資料
型號(hào): FW208
英文描述: TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | SO
中文描述: 晶體管| MOSFET的|配對(duì)| N溝道| 60V的五(巴西)直| 3A條(?。﹟蘇
文件頁數(shù): 3/4頁
文件大小: 43K
代理商: FW208
No.6407-3/4
FW208
IT01139
IT01141
IT01140
IT01142
A S O
100ms
DCopeaion
100
μ
s
1m
10m
IDP=12A
ID=3A
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
100
10
1.0
0.1
0.01
2 3
5 7
Drain-to-Source Voltage, V
DS
– V
2 3
5 7
2 3
5 7
0.01
2 3
5 7
100
Operation in this
area is limited by RDS(on).
0
0
20
40
60
0.4
0.2
0.8
1.0
1.2
0.6
80
100
120
1.4
1.6
2.0
1.8
1.7
2.2
140
160
PD -- Ta
IT01481
0
0
0.2
0.4
0.6
0.4
0.2
0.8
1.0
1.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.4
1.6
1.8
PD(FET1) -- PD(FET2)
Mounedonaceamcboad(1200mm
2
×
08mm 1unt
0.1
1.0
2
3
5
7
2
3
5
7
1000
100
7
5
3
2
7
5
3
2
10
7
5
3
2
10
SW Time -- ID
VDD=30V
VGS=10V
td(on)
td(off)
tr
tf
0
5
10
15
20
25
30
10
100
1000
7
5
3
2
7
5
3
2
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
IT01137
IT01138
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
7
5
3
2
7
5
3
2
10
y
fs
-- ID
VDS=10V
75
°
C
25
°
C
T=-25
°
C
0
0.8
1.0
1.2
0.2
0.4
0.6
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
IF -- VSD
VGS = 0
-
°
C
2
°
C
T5
°
C
F
Drain Current, I
D
– A
Diode Forward Voltage, VSD – V
F
F
S
Drain Current, I
D
– A
C
Drain-to-Source Voltage, V
DS
– V
D
D
Ta=25
°
C
Single pulse
Mounted on a ceramic board (1200mm
2
×
0.8mm) 1 unit
A
D
Allowable Power Dissipation (FET2), P
D
– W
A
D
Ambient Temperature, Ta – C
Mounted on a ceramic board (1000mm
2
×
0.8mm)
1unt
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