參數(shù)資料
型號: FW250
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channl Silicon MOSFET Ultrahigh-Speed Switching Applications
中文描述: ? - Channl硅MOSFET的超高速開關(guān)應(yīng)用
文件頁數(shù): 1/4頁
文件大小: 30K
代理商: FW250
FW250
No.7548-1/4
Features
Low ON-resistance.
Ultrahigh-speed switcing.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW
10s)
Drain Current (PW
100ms)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
60
±
20
3
duty cycle
1%
duty cycle
1%
PW
10
μ
s, duty cycle
1%
Mounted on a ceramic board(2000mm
2
0.8mm)1unit, PW
10s
Mounted on a ceramic board(2000mm
2
0.8mm), PW
10s
3.5
5.5
20
1.8
2.2
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=
±
16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=1.5A, VGS=4V
60
V
μ
A
μ
A
V
S
m
m
1
±
10
2.6
1.2
2.8
4
Static Drain-to-Source On-State Resistance
110
150
145
215
Marking : W250
Continued on next page.
N-Channl Silicon MOSFET
Ordering number : ENN7548
FW250
91603 TS IM TA-100553
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2129
[FW250]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1
4
5
8
4
0
6
0.2
5.0
0.595
1.27
1
0
1
0.43
相關(guān)PDF資料
PDF描述
FW257 N CHANNEL MOS SILICON TRANSISTOR
FW261 N CHANNEL MOS SILICON TRANSISTOR
FW262 N-Channel Silicon MOSFET
FW306 N- Channel Silicon MOS FET High Speed Switching
FW307 Ultrahigh-Speed Switching Applications
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