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FW342
No.7912-1/6
Features
For motor drives, inverters.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
Conditions
N-channel
P-channel
Unit
V
V
A
A
A
A
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW
≤
10s)
Drain Current (PW
≤
100ms)
Drain Current (PW
≤
10
μ
s)
30
±
20
--30
±
20
--5
--5.5
--9
--20
6
7
duty cycle
≤
1%
duty cycle
≤
1%
duty cycle
≤
1%
Mounted on a ceramic board
(1500mm
2
0.8mm)1unit, PW
≤
10s
Mounted on a ceramic board
(1500mm
2
0.8mm), PW
≤
10s
10
24
Allowable Power Dissipation
1.8
W
Total Dissipation
PT
2.2
W
Channel Temperature
Storage Temperature
Tch
Tstg
150
°
C
°
C
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=
±
16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
ID=3A, VGS=4.5V
ID=3A, VGS=4V
30
V
μ
A
μ
A
V
S
m
m
m
1
±
10
2.6
1.2
4.6
7.8
25
35
37
33
49
52
Static Drain-to-Source On-State Resistance
Marking : W342
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7912
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2004 TS IM TA-101197
FW342
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications