參數(shù)資料
型號(hào)： FX20ASJ-03
廠商： POWEREX INC
元件分類： JFETs
英文描述： Pch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述： 20 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： COMPACT, MP-3, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 44K
代理商： FX20ASJ-03
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–30
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.8
0.11
0.21
–1.1
5.8
1130
232
83
15
33
49
26
–1.0
—
50
—
±0.1
–0.1
–2.3
0.13
0.29
–1.3
—
—
—
—
—
—
—
—
–1.5
4.17
—
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= –1mA, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –30V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –10A, V
GS
= –10V
I
D
= –2A, V
GS
= –4V
I
D
= –10A, V
GS
= –10V
I
D
= –10A, V
DS
= –5V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
V
DD
= –15V, I
D
= –10A, V
GS
= –10V, R
GEN
= R
GS
= 50
I
S
= –10A, V
GS
= 0V
Channel to case
I
S
= –10A, dis/dt = 50A/
μ
s
PERFORMANCE CURVES
0
8
16
24
32
40
0
200
50
100
150
–2
–10
0
–3 –5 –7
–2
–10
1
–3 –5 –7
–2
–2
–10
2
–3 –5 –7
–10
2
–5
–3
–7
–2
–10
0
–10
1
–2
–3
–5
–7
–2
–2
–3
–5
–7
tw =
10
μ
s
T
C
= 25°C
Single Pulse
100
μ
s
10ms
DC
1ms
0
–4
–8
–12
–16
–20
0
–1.0
–2.0
–3.0
–4.0
–5.0
P
D
= 30W
V
=
–10V
Tc = 25°C
Pulse Test
–5V
–3V
–4V
–6V
–8V
–7V
0
–2
–4
–6
–8
–10
0
–0.4
–0.8
–1.2
–1.6
–2.0
–6V
–4V
–5V
–3V
–8V
V
GS
= –10V
Tc = 25°C
Pulse Test
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
相關(guān)PDF資料
PDF描述
FX20ASJ-06 Circular Connector; No. of Contacts:85; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:40; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:40-56 RoHS Compliant: No
FX20ASJ-06 ER 3C 3#16S SKT RECP LINE
FX20ASJ-2 HIGH-SPEED SWITCHING USE
FX20ASJ-2 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX20KMJ-03 HIGH-SPEED SWITCHING USE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FX20ASJ-03F 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX20ASJ-03F-T13 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX20ASJ06 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-252AA
FX20ASJ-06 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 60V 20A 3PIN MP-3A - Rail/Tube
FX20ASJ-06-T13 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 60V 20A 3PIN MP-3A - Tape and Reel
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