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參數(shù)資料
| 型號(hào)： | FX20KMJ-03 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開關(guān)使用 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | FX20KMJ-03 |
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–30
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.8
0.11
0.21
–1.1
5.8
1130
232
83
15
33
49
26
–1.0
—
50
—
±0.1
–0.1
–2.3
0.13
0.29
–1.3
—
—
—
—
—
—
—
—
–1.5
6.25
—
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
PERFORMANCE CURVES
I
D
= –1mA, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –30V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –10A, V
GS
= –10V
I
D
= –2A, V
GS
= –4V
I
D
= –10A, V
GS
= –10V
I
D
= –10A, V
DS
= –5V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
V
DD
= –15V, I
D
= –10A, V
GS
= –10V, R
GEN
= R
GS
= 50
I
S
= –10A, V
GS
= 0V
Channel to case
I
S
= –10A, dis/dt = 50A/
μ
s
0
8
16
24
32
40
0
200
50
100
150
0
–4
–8
–12
–16
–20
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
–2
–4
–6
–8
–10
0
–0.4
–0.8
–1.2
–1.6
–2.0
–10
0
–2
–3
–5
–7
–10
1
–2
–2
–3
–5
–7
–10
2
–2
–3
–5
–7
–2
–10
0
–3 –5–7
–2
–10
1
–3 –5–7
–2
–10
2
–3 –5–7
–2
tw = 10
μ
s
T
C
= 25°C
Pulse Set
100
μ
s
10ms
1ms
DC
Tc = 25°C
Pulse Test
–6V
–7V
–8V
P
=
20W
V
=
–10V
–4V
–3V
–5V
–4V
–3V
V
GS
= –10V
–8V
–6V
Tc = 25°C
Pulse Test
–5V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
MITSUBISHI Pch POWER MOSFET
FX20KMJ-03
HIGH-SPEED SWITCHING USE
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| FX20KMJ-06 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FX20KMJ-03-A8 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET |
| FX20KMJ06 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | SOT-186 |
| FX20KMJ-06 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FX20KMJ-06-A8 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET |
| FX20KMJ2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | SOT-186 |
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