參數(shù)資料
型號(hào): FY10AAJ-03
廠商: Mitsubishi Electric Corporation
英文描述: HIGH-SPEED SWITCHING USE
中文描述: 高速開關(guān)使用
文件頁數(shù): 2/4頁
文件大小: 38K
代理商: FY10AAJ-03
Sep.1998
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
V
μ
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
30
1.0
1.5
9.5
15
0.095
20
1800
650
280
25
45
125
90
0.75
45
±0.1
0.1
2.0
13.5
20.0
0.135
1.10
62.5
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 10V
I
D
= 5A, V
GS
= 4V
I
D
= 10A, V
GS
= 10V
I
D
= 10A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 15V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 2.3A, V
GS
= 0V
Channel to ambient
I
S
= 2.3A, dis/dt = –50A/
μ
s
PERFORMANCE CURVES
0
0.5
1.0
1.5
2.0
2.5
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
2
10
0
3 57
2
10
1
3 57
2
10
2
3 57
2
10
3
3 57
2
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
2
2
tw = 100μs
100ms
1ms
10ms
DC
T
C
= 25°C
Single Pulse
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
P
D
= 2W
T
C
= 25°C
Pulse Test
4V
3.5V
3V
V
GS
= 10V
8V
6V
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
T
C
= 25°C
Pulse Test
P
D
= 2W
3.5V
3V
V
GS
= 10V
8V
6V
4V
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