參數(shù)資料
型號: FY6BCH-02
廠商: Powerex Power Semiconductors
英文描述: Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: N溝道功率MOSFET高速開關(guān)使用
文件頁數(shù): 3/4頁
文件大?。?/td> 43K
代理商: FY6BCH-02
PRELIMINARY
Some parametric limits are subject to change.
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
10
–1
10
0
2
3 4 5
7
2
3 4 5
7
10
1
10
2
3
4
5
7
10
3
2
3
4
5
7
2
Ciss
Coss
Crss
T
C
h = 25°C
f = 1MH
Z
V
GS
= 0V
10
0
10
1
2
3 4 5 7
2
3 4 5
5
7
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25°C
75°C
125°C
V
DS
= 10V
Pulse Test
0
4
8
12
16
20
0
1.0
2.0
3.0
4.0
5.0
T
C
= 25°C
V
DS
= 10V
Pulse Test
0
0.2
0.4
0.6
0.8
1.0
0
1.0
2.0
3.0
4.0
5.0
6A
3A
I
D
= 12A
T
C
= 25°C
Pulse Test
0
10
–1
2
20
40
60
80
100
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
T
C
= 25°C
Pulse Test
V
GS
= 2.5V
4V
10
–1
10
0
2
3 4 5
7
2
3 4 5
7
10
1
10
1
2
2
3
4
5
7
10
2
2
3
4
5
7
T
C
h = 25°C
V
DD
= 10V
V
GS
= 4V
R
GEN
= R
GS
= 50
t
d(off)
t
d(on)
t
r
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
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