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參數(shù)資料
| 型號： | FY7BFH-02E |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開關使用 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 72K |
| 代理商： | FY7BFH-02E |
MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
HIGH-SPEED SWITCHING USE
Sep. 2001
0.4
0.6
0.8
1.0
1.2
1.4
–
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
0
0.4
0.8
1.2
1.6
2.0
–
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
T
C
= 125
°
C
75
°
C
25
°
C
V
GS
= 0V
Pulse Test
10
–
1
10
0
2
3
5
7
10
1
2
3
5
7
–
50
0
50
100
150
V
GS
= 4V
I
D
= 7A
Pulse Test
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (
°
C)
D
D
°
C
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (
°
C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
T
t
(
–
c
°
C
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
°
C
CHANNEL TEMPERATURE Tch (
°
C)
D
(
°
C
D
(
°
C
0
1.0
2.0
3.0
4.0
5.0
0
8
16
24
32
40
V
DS
= 7V
10V
15V
T
C
h = 25
°
C
I
D
= 7A
10
–
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–
4
2 3 57
2 3 57
2 3 57
2 3 57
10
0
2 3 57
10
1
2 3 57
10
2
10
–
3
10
–
2
10
–
1
D = 1.0
0.5
0.1
0.2
0.05
0.02
0.01
Single Pulse
P
DM
tw
D
=
T
tw
T
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