參數(shù)資料
型號(hào): FYA3010DN
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Rectifier
中文描述: 30 A, 100 V, SILICON, RECTIFIER DIODE
封裝: TO-3P, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 427K
代理商: FYA3010DN
2005 Fairchild Semiconductor Corporation
FYA3010DN Rev. A
1
www.fairchildsemi.com
F
July 2005
FYA3010DN
Schottky Barrier Rectifier
Features
Low forward voltage drop
High frequency properties and switching speed
Guard ring for over-voltage protection
Applications
Switched mode power supply
Freewheeling diodes
Absolute Maximum Ratings
(per diode) T
a
= 25°C unless otherwise noted
Thermal Characteristics
T
a
= 25°C unless otherwise noted
Electrical Characteristics
(per diode) T
a
= 25°C unless otherwise noted
* Pulse Test: Pulse Width=300
μ
s, Duty Cycle
=
2%
Symbol
Parameter
Value
Units
V
RRM
V
R
I
F(AV)
I
FSM
Maximum Repetitive Reverse Voltage
100
V
Maximum DC Reverse Voltage
100
V
Average Rectified Forward Current @ T
C
= 135
°
C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
30
A
250
A
T
J,
T
STG
Operating Junction and Storage Temperature
- 65 to +150
°
C
Symbol
Parameter
Value
Units
R
θ
JC
R
θ
JC
R
θ
JC
Maximum Thermal Resistance, Junction to Case (per diode)
0.78
°
C/W
°
C/W
°
C/W
Maximum Thermal Resistance, Junction to Case (per PKG)
0.48
Maximum Thermal Resistance, Case to Heatsink
0.2
Symbol
Parameter
Value
Units
V
FM *
Maximum Instantaneous Forward Voltage
I
F
= 15A
I
F
= 15A
I
F
= 30A
I
F
= 30A
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
0.85
0.67
1.05(Typ.)
0.80
V
I
RM *
T
C
= 25
°
C
T
C
= 125
°
C
1
20
mA
1. Anode 2.Cathode 3. Anode
1
3
2
TO-3P
Marking: Y3010DN
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