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參數(shù)資料
| 型號： | FZT694 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | NPN硅平面中功率高增益晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 98K |
| 代理商： | FZT694 |
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
High V
CEO
/ Very Low Saturation Voltage
*
Gain of 400 at I
C
=200mA
APPLICATIONS
*
Darlington replacement
*
Relay / solenoid driver
PARTMARKING DETAIL -
FZT694B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=100
μ
A
I
C
=10mA*
I
E
=100
μ
A
V
CB
=100V
V
EB
=4V
I
C
=100mA, I
B
=0.5mA*
I
C
=400mA, I
B
=5mA*
I
C
=1A, I
B
=10mA*
Breakdown Voltages
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
120
V
120
V
5
V
μ
A
μ
A
Collector Cut-Off Current
0.1
Emitter Cut-Off Current
0.1
Collector-Emitter
Saturation Voltage
0.25
0.5
V
V
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
500
400
150
I
C
=100mA, V
CE
=2V
*
I
C
=200mA, V
CE
=2V*
I
C
=400mA, V
CE
=2V*
I
=50mA, V
CE
=5V
f=50MHz
Transition Frequency
f
T
MHz
Input Capacitance
C
ibo
C
obo
t
on
t
off
200
pF
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=100mA, I
B!
=10mA
I
B2
=10mA, V
CC
=50V
Output Capacitance
9
pF
Switching Times
80
2900
ns
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT694B
C
C
E
B
3 - 225
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FZT694B | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT223 NPN SILICON PLANAR MEDIUM |
| FZT694BTA | 功能描述:達林頓晶體管 NPN High Gain & Crnt RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZT694BTC | 功能描述:達林頓晶體管 NPN High Gain & Crnt RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZT696B | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| FZT696BTA | 功能描述:達林頓晶體管 NPN High Gain & Crnt RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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