參數(shù)資料
型號(hào): FZT705
廠商: Electronic Theatre Controls, Inc.
英文描述: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
中文描述: 采用SOT223 NPN硅平面中功率達(dá)林頓晶體管
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 70K
代理商: FZT705
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 - OCTOBER 1995
FEATURES
*
*
Guaranteed h
FE
Specified up to 2A
Fast Switching
PARTMARKING DETAIL -
COMPLEMENTARY TYPES -
DEVICE TYPE IN FULL
FZT604 - FZT704
FZT605 - FZT705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT604
FZT605
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
120
140
V
Collector-Emitter Voltage
100
120
V
Emitter-Base Voltage
10
V
Peak Pulse Current
4
A
Continuous Collector Current
1.5
A
Power Dissipation
2
W
Operating and Storage Temperature Range
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
FZT604
FZT605
V
(BR)CBO
120
140
V
V
I
C
=100
μ
A
I
C
=100
μ
A
I
C
=10mA*
I
C
=10mA*
I
E
=100
μ
A
V
CB
=100V
V
CB
=100V,
T
amb
=100°C
Collector-Emitter
Breakdown Voltage
FZT604
FZT605
V
(BR)CEO
100
120
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
10
V
Collector Cut-Off
Current
FZT604
I
CBO
0.01
10
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
FZT605
0.01
10
V
CB
=120V
V
CB
=120V,
T
amb
=100°C
Emitter Cut-Off Current
I
EBO
0.1
V
EB
=8V
Collector-Emitter
Cut-Off Current
FZT604
I
CES
10
V
CES
=100V
FZT605
10
V
CES
=120V
Collector-EmitterSaturation
Voltage
V
CE(sat)
1.0,
1.5
V
V
I
C
=250mA, I
=0.25mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, V
CE
=5V*
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Base-Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
1.8
V
Base-Emitter Turn-On Voltage
1.7
V
Static Forward
Current Transfer Ratio
2K
5K
2K
0.5K
100K
C
C
E
B
FZT604
FZT605
3 - 202
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