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參數(shù)資料
| 型號： | G10447-51 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | GaAs PIN photodiode with preamp |
| 中文描述： | GaAs PIN型光電二極管和前置放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 132K |
| 代理商： | G10447-51 |
PHOTODIODE
GaAs PIN photodiode with preamp
ROSA type, 850 nm, 10 Gbps
G10447-51/-54
Features
Applications
l φ1.25 mm (-54)/ φ2.5 mm (-51)sleeve type ROSA
(Receiver Optical Sub-Assembly)
l High-speed response: 10 Gbps
l Low power supply voltage: Vcc=Vpd=3.3 V
l Differential output
l Sensitivity: +2 to -13.5 dBm Typ. (Extinction ratio=3.0 dB)
l Trans-impedance: 6 k Typ. (single-ended)
l Large area (φ0.06 mm) for multi-mode optical fibers
l 10 gigabit ethernet
l Optical fiber communications
PRELIMINARY DATA
Jan. 2007
1
s Absolute m axim um ratings (Ta=25 °C)
Param eter
Sym bol
Value
Unit
Supply voltage
Vcc
-0.5 Min., +3.7 Max.
V
Reverse voltage (photodiode)
VR
7
V
Operating tem perature *
1
Topr
-20 to +85
°C
Storage temperature *
1
Tstg
-40 to +85
°C
*1: No condensation
s
s Recomm ended operating conditions
Param eter
Sym bol
Value
Unit
Case tem perature *
1
Tc
-20 to 85
°C
Supply voltage
Vcc
3.05 to 3.53
V
Reverse voltage (photodiode)
Vpd
3.05 to 5.0
V
Spectral response range
λ
830 to 870
nm
Load resistance *
2
RL
50
Bit rate
-
9 to 10.3
Gbps
Bit pattern
-
NRZ, Mark ratio=1/2
-
*2: Capacitive coupling
s Electrical and optical characteristics (“s Recomm ended operating conditions”, unless otherwise noted)
Param eter
Sym bol
Condition
Min.
Typ.
Max.
Unit
Responsivity
R
0.4
0.55
-
A/W
Supply current
Icc
Dark state, RL=
∞
-
32
45
mA
Cut-off frequency
fc
-3 dB
6.0
8.0
12.3
GHz
Low cut-off frequency
fc-L
-3 dB
-
10
50
kHz
Trans-im pedance *
3
Tz
RL=50
, f=100 MHz
4
6
-
k
Stressed receivable sensitivity
(OMA)
SRS
PN=31, BER=10
-12
Extinction ratio=3 dB
λ=850 nm, VECP=3.5 dB
-
-12
-
dBm
Minim um receivable sensitivity
(OMA)
Pm in
(OMA)
Extinction
ratio=3 dB
-
-13.5
-12
Maxim um receivable sensitivity
(Average)
Pm ax
PN=31
BER=10
-12
Extinction
ratio=7 dB
+0.5
+2
-
dBm
Output am plitude
Vom ax
Differential
300
450
650
m Vpp
Tc=25 °C
-
0.02
1
Dark current
ID
Dark state
Vpd=3.3 V
-
100
nA
Optical return loss
ORL
12
14
-
dB
Output resistance
Rout
-
60
-
*3: Single-ended (Vout+) measurement
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