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參數(shù)資料
| 型號(hào)： | G1116 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | GaAsP photodiode |
| 中文描述： | 鎵砷磷光電二極管 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 172K |
| 代理商： | G1116 |
GaAsP photodiode
Diffusion type
Borosilicate glass window may extend a
maximum of 0.1 mm beyond the upper
surface of the cap.
CONNECTED
TO CASE
PHOTOSENSITIVE
SURFACE
14
2.4
3.55
±
0.2
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
WINDOW
3.0 ± 0.2
0.45
LEAD
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
PHOTOSENSITIVE
SURFACE
CONNECTED
TO CASE
20
4.1
±
0.2
2.9
0.45
LEAD
8.1 ± 0.1
WINDOW
5.9 ± 0.1
9.1 ± 0.2
5.08 ± 0.2
PHOTOSENSITIVE
SURFACE
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
15
5.0
±
0.2
1.9
0.45
LEAD
12.35 ± 0.1
13.9 ± 0.2
7.5 ± 0.2
WINDOW
10.5 ± 0.1
MARK ( 1.4)
CONNECTED
TO CASE
3.0 ± 0.2
14
1.5
±
0.2
0.6
0.45
LEAD
5.0
±
0.2
ACTIVE AREA
6.0 ± 0.2
CATHODE
TERMINAL MARK
PHOTOSENSITIVE
SURFACE
G1115
s
Dimensional outlines (unit: mm)
KGPDA0012EA
G1116
KGPDA0013EA
G1117
KGPDA0014EA
G1118
KGPDA0002EA
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