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參數(shù)資料
| 型號(hào)： | G1126-02 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | GaAsP photodiode |
| 中文描述： | 鎵砷磷光電二極管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | G1126-02 |
Features
l Low dark current
l High UV sensitivity
Applications
l Analytical instruments
l Color identification
l UV detection
PHOTODIODE
GaAsP photodiode
Schottky type for UV to visible range
G1126-02, G1127-02, G2119
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective
active
area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material
Package
(mm)
(mm2)
(V)
(°C)
G1126-02
/Q *
TO-5
2.3 × 2.3
5.2
G1127-02
/Q
TO-8
4.6 × 4.6
21
G2119
/Q
Ceramic
10.1 × 10.1
98
5
-10 to +60
-20 to +70
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
λ
Peak
sensitivity
wave-
length
λp
Short circuit
current
Isc
100 lx
Dark
current
ID
Max.
Temp.
coefficient
of
ID
TCID
Rise time
tr
VR=0 V
RL=1 k
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
Type No.
(nm) (nm)
λp
Hg
line
254 nm
GaP
LED
560 nm
He-Ne
laser
633 nm Min.
(A)
Typ.
(A)
V4=10 mV
(pA)
VR=1 V
(pA) (times/°C)
(s)
(pF)
Min.
(G)
Typ.
(G) (W/Hz1/2)
G1126-02
0.25 0.3
5
50
3.5
1800
2
15 5.8 × 10-15
G1127-02
0.9 1.2
10
100
12
7000
1
8
8.0 × 10-15
G2119
190 to 680 610 0.18 0.035 0.17 0.17
5
6
100 5000
1.07
55
25000 0.1 0.7 2.4 × 10-14
* Window material Q: quartz glass
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PDF描述 |
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| G1127-02 | GaAsP photodiode |
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| G1127-02 | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:GaAsP photodiode |
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