參數(shù)資料
型號: G5851-103
廠商: Hamamatsu Photonics
英文描述: InGaAs PIN photodiode
中文描述: 銦鎵砷PIN光電二極管
文件頁數(shù): 4/4頁
文件大?。?/td> 169K
代理商: G5851-103
InGaAs PIN photodiode
G8421/G8371/G5851 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 200
3 Hamamatsu Photonics K.K.
Cat. No. KIRD1046E02
Jan.2003 DN
4
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 ± 0.2
14 ± 0.2
15.3 ± 0.2
4.4
±
0.2
6.4
±
0.2
12
MIN.
0.45
LEAD
10.2 ± 0.2
5.1
±
0.2
5.1 ± 0.2
PHOTOSENSITIVE
SURFACE
WINDOW
3.0 ± 0.1
4.7 ± 0.1
2.7
±
0.2
3.6
±
0.2
13
MIN.
5.4 ± 0.2
0.45
LEAD
CASE
2.5 ± 0.2
PHOTOSENSITIVE
SURFACE
WINDOW
5.9 ± 0.1
2.5
±
0.2
0.15
MAX.
0.4
MAX.
8.1 ± 0.1
9.2 ± 0.2
4.2
±
0.2
18
MIN.
0.45
LEAD
CASE
5.1 ± 0.3
1.5 MAX.
PHOTOSENSITIVE
SURFACE
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 ± 0.2
14 ± 0.2
15.3 ± 0.2
6.7
±
0.2
10
±
0.2
12
MIN.
10.2 ± 0.2
5.1
±
0.2
5.1 ± 0.2
0.45
LEAD
PHOTOSENSITIVE
SURFACE
I Dimensional outlines (unit: mm)
KIRDA0150EA
KIRDA0151EA
KIRDA0029EB
G8421-03/-05, G8371-01
G8371-03
G5851-103/-11/-13
G5851-203/-21/-23
KIRDA0031EB
相關PDF資料
PDF描述
G5851-11 InGaAs PIN photodiode
G5851-13 InGaAs PIN photodiode
G5851-203 InGaAs PIN photodiode
G5851-21 InGaAs PIN photodiode
G5851-23 InGaAs PIN photodiode
相關代理商/技術(shù)參數(shù)
參數(shù)描述
G5851-11 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5851-13 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5851-203 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5851-21 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5851-23 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode