參數(shù)資料
型號: G5851-23
廠商: Hamamatsu Photonics
英文描述: InGaAs PIN photodiode
中文描述: 銦鎵砷PIN光電二極管
文件頁數(shù): 2/4頁
文件大?。?/td> 169K
代理商: G5851-23
InGaAs PIN photodiode
G8421/G8371/G5851 series
WAVELENGTH (m)
(Typ.)
PHOTO
SENSITIVITY
(A/W)
1.4
1.2
1.0
0.8
0
0.2
0.4
1.4
1.2
1.0
0.8
0.6
1.6
1.8
2.2
2.0
T= -10 C
T= -20 C
T=25 C
1
0.8
1.6
2
2.2
2.6
WAVELENGTH (m)
TEMPERATURE
COEFFICIENT
(%/
C)
-1
(Typ.)
1.2
1.4
1.8
2.4
0
1
2
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK
CURRENT
1 nA
10 nA
100 nA
1
A
10
A
(Typ. Ta=25 C)
G8371-03
G8371-01
G8421-03
G8421-05
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK
CURRENT
100 pA
(Typ.)
1 nA
10 nA
100 nA
1
A
G5851-13 (T= -10 C)
G5851-23 (T= -20 C)
G5851-11 (T= -10 C)
G5851-103 (T= -10 C)
G5851-203 (T= -20 C)
G5851-21
(T= -20 C)
0.1
1
10
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
1 pF
(Typ. Ta=25 C, f=1 MHz)
100 pF
10 nF
10 pF
1 nF
G8371-03
G5851-13/-23
G8371-01
G5851-11/-21
G8421-05
G8421-03
G5851-103/-203
1 M
-40
-20
0
40
60
SHUNT
RESISTANCE
100 k
1 k
100
10 k
10 M
(Typ. VR=10 mV)
20
80
90
100
ELEMENT TEMPERATURE (C)
G8371-03
G5851-13/-23
G8421-05
G8421-03
G5851-103/-203
G8371-01
G5851-11/-21
I Spectral response
KIRDB0221EA
I Photo sensitivity temperature characteristic
KIRDB0208EA
I Dark current vs. reverse voltage
I Terminal capacitance vs. reverse voltage
KIRDB0233EA
I Shunt resistance vs. element temperature
KIRDB0234EA
Non-cooled type
TE-cooled type
KIRDB0232E
B
KIRDB0223EA
2
相關(guān)PDF資料
PDF描述
G5852-103 InGaAs PIN photodiode
G5852-11 InGaAs PIN photodiode
G5852-13 InGaAs PIN photodiode
G5852-203 InGaAs PIN photodiode
G5852-21 InGaAs PIN photodiode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
G5852-103 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5852-11 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5852-13 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5852-203 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5852-21 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode