參數(shù)資料
型號: G5852-13
廠商: Hamamatsu Photonics
英文描述: InGaAs PIN photodiode
中文描述: 銦鎵砷PIN光電二極管
文件頁數(shù): 2/4頁
文件大?。?/td> 255K
代理商: G5852-13
InGaAs PIN photodiode
G8422/G8372/G5852 series
WAVELENGTH (m)
(Typ.)
PHOTO
SENSITIVITY
(A/W)
1.4
1.2
1.0
0.8
0
0.2
0.4
1.4
1.2
1.0
0.8
0.6
1.6
1.8
2.2
2.0
2.4
T= -10 C
T= -20 C
T=25 C
1
0.8
1.6
2
2.2
2.6
WAVELENGTH (m)
TEMPERATURE
COEFFICIENT
(%/
C)
-1
(Typ.)
1.2
1.4
1.8
2.4
0
1
2
G8372-03
G8372-01
G8422-05
G8422-03
10
A
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK
CURRENT
1
A
10 pA
100 nA
100
A
(Typ. Ta=25
C)
100 nA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK
CURRENT
10 nA
100 pA
1 nA
1
A
(Typ.)
G5852-13 (T= -10 C)
G5852-23 (T= -20 C)
G5852-11 (T= -10 C)
G5852-21 (T= -20 C)
G5852-103 (T= -10 C)
G5852-203 (T= -20 C)
1 nF
0.01
0.1
1
10
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
100 pF
1 pF
10 pF
10 nF
(Typ. Ta=25 C, f=1 MHz)
G8372-03
G5852-13/-23
G8372-01
G5852-11/-21
G8422-03
G5852-103/-203
G8422-05
1 M
-40
-20
0
20
40
60
80
90
100
ELEMENT TEMPERATURE (C)
100 k
10 k
100
1 k
10 M
(Typ. VR=10 mV)
G8422-03
G5852-103/-203
G8422-05
G8372-01
G5852-11/-21
G8372-03
G5852-13/-23
SHUNT
RESISTANCE
s Spectral response
KIRDB0226EA
s Photo sensitivity temperature characteristic
KIRDB0207EA
s Dark current vs. reverse voltage
KIRDB0235EA
KIRDB0228EA
s Terminal capacitance vs. reverse voltage
KIRDB0236EA
s Shunt resistance vs. element temperature
KIRDB0237EA
Non-cooled type
TE-cooled type
2
相關(guān)PDF資料
PDF描述
G5852-203 InGaAs PIN photodiode
G5852-21 InGaAs PIN photodiode
G5852-23 InGaAs PIN photodiode
G5853-103 InGaAs PIN photodiode
G5853-11 InGaAs PIN photodiode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
G5852-203 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5852-21 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5852-23 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5853-103 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
G5853-11 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode