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參數(shù)資料
| 型號： | G6742 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Tantalum Molded Capacitor; Capacitance: 4.7uF; Voltage: 10V; Case Size: 3.4x1.9 mm; Packaging: Tape & Reel |
| 中文描述： | 銦鎵砷PIN光電二極管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 336K |
| 代理商： | G6742 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
InGaAs PIN photodiode
G6742 series
Cat. No. KIRD1016E01
Mar. 2001 DN
WAVELENGTH (m)
PHOTO
SENSITIVITY
(A/W)
2.0
0.5
(Typ. Ta=25 C)
0.8
1.0
1.2
1.4
1.6
1.8
1
0.6
100 nA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
DARK
CURRENT
10 nA
100 pA
10 pA
1 nA
1 A
(Typ. Ta=25 C)
G6742-003
G6742-01
s
s Spectral response
KIRDB0002EB
s
s Dark current vs. reverse voltage
KIRDB0150EA
s
s Dimensional outlines (unit: mm, tolerance: ±0.1)
KIRDA0057EA
ACTIVE AREA
0.3
0.6 MAX.
0.2
2.0
0.2
0.5
2.6
4.0
2.0
ANODE
CATHODE
GOLD PLATING PART
0.15
1.7
KIRDA0058EA
ACTIVE AREA
0.3
1
0.6 MAX.
0.3
2.0
0.2
0.5
2.6
4.0
2.0
ANODE
CATHODE
GOLD PLATING PART
0.15
1.7
s
Photo sensitivity temperature
characteristic
KIRDB0042EA
WAVELENGTH (m)
TEMPERATURE
COEFFICIENT
(%/
C)
(Typ. Ta=25
C)
1.0
1.2
1.4
1.6
1.8
0.8
0
1
-1
2
s
Terminal capacitance vs.
reverse voltage
s
s Shunt resistance vs. ambient temperature
1 nF
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
100 pF
1 pF
100 fF
10 pF
10 nF
(Typ. Ta=25
C, f=1 MHz)
G6742-01
G6742-003
10 G
-40
-20
0
40
60
80
100
AMBIENT TEMPERATURE (C)
SHUNT
RESISTANCE
1 G
10 M
1 M
100 M
100 G
(Typ. VR=10 mV)
20
G6742-01
G6742-003
G6742-01
G6742-003
KIRDB0209EA
KIRDB0210EA
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PDF描述 |
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|---|---|
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| G6742-01 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
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| G-675-38X | 制造商:ETC MOLEX-INACTIVE 功能描述:Cross Referenced to MOLEX - Part: MOL19071-0283 |
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