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參數資料
| 型號： | G6849-01 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode |
| 中文描述： | 銦鎵砷PIN光電二極管 |
| 文件頁數： | 2/2頁 |
| 文件大小： | 117K |
| 代理商： | G6849-01 |
InGaAs PIN photodiode
G6849 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
WAVELENGTH (m)
PHOTO
SENSITIVITY
(A/W)
2.0
0.5
0
(Typ. Ta=25 C)
0.8
1.0
1.2
1.4
1.6
1.8
1
0.6
WAVELENGTH (m)
TEMPERATURE
COEFFICIENT
(%/
C)
(Typ. Ta=25
C)
1.0
1.2
1.4
1.6
1.8
0.8
0
1
-1
2
G6849
G6849-01
100 nA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
DARK
CURRENT
10 nA
100 pA
10 pA
1 nA
1 A
(Typ. Ta=25 C)
10 G
-40
-20
0
40
60
80
100
AMBIENT TEMPERATURE (C)
SHUNT
RESISTANCE
1 G
10 M
1 M
100 M
100 G
(Typ. VR=10 mV)
20
G6849
G6849-01
9.1 ± 0.2
8.1 ± 0.1
5.9 ± 0.1
ACTIVE AREA
WINDOW
DETAILS OF
PHOTODIODE
2
b
d
c
a
0.1
5.84
3.1 ± 0.6
4.1
±
0.2
(2.5
±
0.3)
0.8
±
0.5
13.0
±
2.0
0.45
LEAD
ANODE a
NC
ANODE b
NC
ANODE c
NC
ANODE d
CATHODE (COMMON)
PHOTOSENSITIVE
SURFACE
DETAILS OF
PHOTODIODE
9.1 ± 0.2
5.84
3.1 ± 0.6
8.1 ± 0.2
5.9 ± 0.2
4.1
±
0.2
(2.5
±
0.3)
0.8
±
0.5
13.0
±
2.0
1
b
d
c
a
0.03
0.45
LEAD
ANODE a
NC
ANODE b
NC
ANODE c
NC
ANODE d
CATHODE (COMMON)
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
WINDOW
0.01
0.1
1
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
1 nF
10 pF
1 pF
100 pF
10 nF
(Typ. Ta=25 C, f=1 MHz)
10
G6849-01
G6849
Cat. No. KIRD1042E02
Feb. 2002 DN
s Spectral response
KIRDB0002EB
s Photo sensitivity temperature
characteristic
KIRDB0042EA
s Dark current vs. reverse voltage
KMIRB0016EB
s Terminal capacitance vs.
reverse voltage
KMIRB0015EB
s Shunt resistance vs. ambient
temperature
KMIRB0014EA
s Dimensional outlines (unit: mm)
KIRDA0059EA
KIRDA0143EA
G6849
G6849-01
2
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