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參數(shù)資料
| 型號： | 934056947115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-243AA |
| 封裝： | PLASTIC, MPT3, SC-62, UPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 72K |
| 代理商： | 934056947115 |
2002 Feb 04
2
Philips Semiconductors
Product specication
NPN 7 GHz wideband transistor
BFQ591
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
APPLICATIONS
Intended for applications in the GHz range such as MATV
or CATV amplifiers and RF communications subscribers
equipment.
DESCRIPTION
NPN wideband transistor in a SOT89 plastic package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BFQ591
BCp
PIN
DESCRIPTION
1
emitter
2
collector
3
base
handbook, halfpage
12
3
Bottom view
MBK514
Fig.1 Simplified outline (SOT89).
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
IC
collector current (DC)
200
mA
Ptot
total power dissipation
Ts ≤ 90 °C; note 1
2.25
W
hFE
DC current gain
IC = 70 mA; VCE = 8 V
6090250
Cre
feedback capacitance
IC = 0; VCB = 12 V; f = 1 MHz
0.8
pF
fT
transition frequency
IC = 70 mA; VCE =12V;
f = 1 GHz
7
GHz
GUM
maximum unilateral power gain
IC = 70 mA; VCE =12V;
f = 900 MHz; Tamb =25 °C
11
dB
|s
21|
2
insertion power gain
IC = 70 mA; VCE =12V;
f = 900 MHz; Tamb =25 °C
10
dB
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