- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄60276 > G8909 (Hamamatsu Photonics) Aluminum Snap-In Capacitor; Capacitance: 3300uF; Voltage: 63V; Case Size: 25x35 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號(hào)： | G8909 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Aluminum Snap-In Capacitor; Capacitance: 3300uF; Voltage: 63V; Case Size: 25x35 mm; Packaging: Bulk |
| 中文描述： | 銦鎵砷PIN光電二極管陣列 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 111K |
| 代理商： | G8909 |
InGaAs PIN photodiode array
G8909-01
2
I Spectral response
KIRDB0002EB
I Dark current vs. reverse voltage
KIRDB0266EA
I Terminal capacitance vs. reverse voltage
KIRDB0267EA
KIRDB0268EA
I Dark current vs. temperature
I Cross-talk characteristic
KIRDB0269EA
WAVELENGTH (m)
PHOTO
SENSITIVITY
(A/W)
2.0
0.5
(Typ. Ta=25 C)
0.8
1.0
1.2
1.4
1.6
1.8
1
0.6
REVERSE VOLTAGE (V)
DARK
CURRENT
0.01
0.1
1
1 pA
10 pA
100 pA
100
(Typ. Ta=25 C)
1 nA
10
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
0.01
0.1
1
100 fF
1 pF
100
(Typ. Ta=25 C, f=1 MHz)
10 pF
10
TEMPERATURE (C)
DARK
CURRENT
20
30
50
10 pA
1 nA
80
(Typ. VR=5 V)
100 nA
100 pA
10 nA
70
40
60
POSITION X (m)
RELATIVE
SENSITIVITY
(%)
-250
-200
-100
0.01
1
0
(Typ. Ta=25 C,
λ=1.55 m, SPOT= 20 m, Pin=5 nW, VR=0.1 V)
100
0.1
10
-50
-150
250 m
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| G8909-01 | InGaAs PIN photodiode array |
| G8921-01 | GaAs PIN photodiode array |
| G8925 | Aluminum Snap-In Capacitor; Capacitance: 3300uF; Voltage: 80V; Case Size: 25x45 mm; Packaging: Bulk |
| G8925-21 | InGaAs PIN photodiode with preamp |
| G8925-22 | InGaAs PIN photodiode with preamp |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| G8909-01 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode array |
| G89101101 | 制造商:Carlo Gavazzi 功能描述:DUPLINE XMIT MAGNET PRX IP68 |
| G89101101G | 制造商:Carlo Gavazzi 功能描述:DUPLINE XMIT MAGNET PRX IP68 |
| G89102116 | 制造商:Carlo Gavazzi 功能描述:WATERSTOP DUPLINE SENSOR |
| G89102129 | 制造商:Carlo Gavazzi 功能描述:DUPLINE PIR DETECTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。