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參數(shù)資料
| 型號： | GA200A |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 晶閘管 |
| 英文描述： | SCRs Nanosecond Switching, Planar |
| 中文描述： | 0.314 A, 60 V, SCR, TO-18 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 99K |
| 代理商： | GA200A |
GA200HS60S
Bulletin I27121 rev. B 07/02
2
www.irf.com
T
J
T
STG
R
thJC
R
thCS
T
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case
Case-to-Sink
Mounting torque
Case to heatsink
Case to terminal 1, 2, 3
Weight
- 40
- 40
150
125
0.15
°C
°C/ W
0.1
4
3
Nm
185
g
V
CES
V
CE(on)
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
600
V
V
GE
= 0V, I
C
= 1mA
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, T
J
= 125°C
I
C
= 0.5mA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
V
GE
= ± 20V
1.19
1.17
1.25
-
6
1
10
± 250
V
GE(th)
I
CES
Gate Threshold Voltage
Collector-to-Emiter Leakage
Current
Gate-to-Emitter Leakage Current
3
mA
I
GES
nA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
E
on
E
off
E
ts
C
ies
C
oes
C
res
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1600 1700
260
580
27
47
74
29
77
106
32500
2080
380
nC
I
C
= 200A
V
CC
= 400V
V
GE
= 15V
I
C
= 200A, V
CC
= 480V, V
GE
= 15V
R
g
= 10
free-wheeling DIODE: 30ETH06
340
670
mJ
31
90
121
mJ
I
C
= 200A, V
CC
= 480V, V
GE
= 15V
R
g
= 10
free-wheeling DIODE: 30ETH06, T
J
= 125°C
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
pF
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Thermal- Mechanical Specifications
Parameters
Min
Typ
Max
Units
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GA200HS60S | 制造商:International Rectifier 功能描述: |
| GA200HS60S1 | 功能描述:IGBT 模塊 200 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GA200HS60S1PBF | 制造商:Vishay Intertechnologies 功能描述:IGBT Module N-CH 480A 600V INT-A-PAK |
| GA200NS61U | 制造商:IRF 制造商全稱:International Rectifier 功能描述:High Side Switch Chopper Module Ultra-Fast Speed IGBT |
| GA200SA60S | 功能描述:IGBT STD 600V 100A SOT227 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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