參數(shù)資料
型號(hào)： GB35XF120K
英文描述： GB35XF120K
中文描述： GB35XF120K
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 213K
代理商： GB35XF120K
IGBT 6PACK MODULE
Features
Low VCE (on) Non Punch Through IGBT Technology
Low Diode VF
10μs Short Circuit Capability
Square RBSOA
HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
Positive VCE (on) Temperature Coefficient
Ceramic DBC Substrate
Low Stray Inductance Design
Benefits
Benchmark Efficiency for Motor Control
Rugged Transient Performance
Low EMI, Requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Low Junction to Case Thermal Resistance
10/18/02
www.irf.com
1
GB35XF120K
V
CES
= 1200V
I
C
= 35A, T
C
=80°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 2.40V
ECONO2 6PACK
UL Listed
Absolute Maximum Ratings
Parameter
Max.
1200
50
35
100
100
50
35
100
±20
284
159
150
Units
V
A
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 80°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 80°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 80°C
T
J
T
STG
V
ISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
V
W
°C
-40 to +125
AC 2500 (1min)
V
Thermal and Mechanical Characteristics
Parameter
Min.
–––
–––
–––
2.7
–––
Typ.
–––
–––
0.05
–––
170
Max.
0.44
0.80
–––
3.3
–––
Units
°C/W
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
(Module)
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
N
.
m
g
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