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參數(shù)資料
| 型號： | GDU90-20422 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Gate Drive Unit |
| 中文描述： | 門驅(qū)動裝置 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | GDU90-20422 |
GDU 90 20422
1/4
V
1 = +5V
V
2 = +15V
V
3 = -15V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
Honeywell sweetspot HFD 3029 - 002
30mA
DG646BH
500mm CO - AX cable type RC5327230
Honeywell sweetspot HFE 4020 - 013
s Used with Gate Turn-Off Thyristors in high current switching
applications
I
FGM
30A
I
G(ON)
7A
dI
GQ/dt
40A/
s
APPLICATIONS
CONDITIONS - (UNLESS STATED OTHERWISE)
KEY PARAMETERS
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
Units
Max.
Typ.
Min.
Conditions
Symbol
I
V1
-
3.80
A
I
V2
+15V PSU current
700Hz, 50% duty cycle
700Hz
Parameter
-
0.73
A
V
2(Min)
On-state gate current
dI
FG/dt
dI
GQ/dt
Rate of rise of negative gate current
Rate of rise of positive gate current
-
Measured 10 - 75% I
FGM
I
T = 2000A,
90% I
G(ON) - 50% IGQM
3.8
--
V
14.0
--
V
14.0
--
V
--
-
30
-
A/
s
-
40
-
A/
s
+5V PSU current
700Hz, I
T = 2000A
GTO T
j = 125C
-15V PSU current
I
V3
-
9.20
A
-
V
1(Min)
+5V PSU minimum
+15V PSU minimum
V
3(Min)
-15V PSU minimum
I
FGM
Peak forward gate current
I
G(ON)
30
7
A
ELECTRICAL CHARACTERISTICS
GDU 90-20422
Gate Drive Unit
Replaces March 1998 version, DS4566-2.1
DS4566-3.0 January 2000
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