參數(shù)資料
型號(hào): GF6968AD
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 6A I(D) | CHIP
中文描述: 晶體管| MOSFET的| N溝道| 20V的五(巴西)直| 6A條(丁)|芯片
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 151K
代理商: GF6968AD
5
1
4
0.260 (6.60)
0.244 (6.20)
8
0.177 (4.50)
0.170 (4.30)
0.012 (0.30)
0.010 (0.25)
0.025 (0.65)
0.006 (0.15)
0.002 (0.05)
0.122 (3.10)
0.114 (2.90)
0.047 (1.20)
0.041 (1.05)
0
°
– 8
°
0.005 (0.127)
0.028 (0.70)
0.020 (0.50)
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Li-ion battery packs use
Designed for battery-switch applications
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
Continuous Drain Current (T
J
= 150°C)
(1)
V
GS
±12
I
D
6.2
A
Pulsed Drain Current
I
DM
30
A
Maximum Power Dissipation
(1)
T
A
= 25°C
T
A
= 70°C
P
D
1.5
0.96
W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
(1)
Thermal Resistance
T
J
, T
stg
–55 to 150
°C
R
θ
JA
83
°C/W
Notes:
(1) Surface mounted on FR4 board, t
10 sec.
Mechanical Data
Case:
TSSOP-8 Package
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position:
Any
Weight:
0.5g
GF6968A
Common-Drain Dual N-Channel MOSFET
Low V
GS(th)
V
DS
20V
R
DS(ON)
22
m
I
D
6.2A
NewProduct
4/11/01
D
1
D
8
S
2
7
S
2
6
G
2
5
S
1
2
S
1
3
G
1
4
0.260 (6.60) min.
0.012 (0.30)
0.010 (0.25)
0.025 (0.65)
0.204 (5.20)
0.028 (0.70)
0.020 (0.50)
Dimensions in inches
and (millimeters)
TSSOP-8
T
RENCH
G
EN
F
ET
Mounting Pad Layout
相關(guān)PDF資料
PDF描述
GF6968E TRANSISTOR | MOSFET | COMMON DRAIN | N-CHANNEL | 20V V(BR)DSS | TSSOP
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