Notice
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devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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33
GH06505T1A
Laser Diodes
(Tc=25
C)
Unit
mA
mA
V
nm
%
Threshold current
Operating current
Operating voltage
Wavelength
Parallel
Perpendicular
2
3
Parallel
2
3
Perpendicular
Misalignment angle
Differential efficiency
Symbol
I
th
I
op
V
op
λ
p
θ
//
θ⊥
R
l
θ
//
θ⊥
α
Conditions
Po=4mW
Po=4mW
Po=4mW
Po=4mW
Po=4mW
Po=4mW
Po=4mW
Po=4mW
Po=4mW
2mW
I (4mW)
I (2mW)
MIN.
-
-
-
648
7
32
-20
-2
-3
-
0.2
TYP.
55
65
2.4
654
9
35
-
-
-
-
0.45
MAX.
68
78
2.95
660
11
38
+
20
+
2
+
3
0.5
0.85
Interference pattern intensity
-
mW/mA
Parameter
4
Ripple
2
Half intensity angle
η
d
■
Electro-optical Characteristics
1
1
Initial value, CW (Continuous Wave) drive
2
Angle at 50% peak intensity (full-width at half-maximum)
3
Parallel to the junction plane (X-Z plane), Perpendicular to the junction plane (Y-Z plane)
4
R
l
=
P/P
P : the maximum deviation of the far field pattern from its approximate curve P : the peak of the approximate curve
Output current
Dark current
Terminal capacitance
Symbol
I
m
I
D
C
t
Conditions
Po=4mW, V
rd
=5V
V
rd
=5V
V
rd
=5V, f=1MHz
MAX.
1.0
150
-
TYP.
0.4
-
3.5
Unit
mA
nA
pF
MIN.
0.2
-
-
Parameter
(Tc=25
C)
■
Electrical Characteristics of Photodiode
Please refer to the chapter "Handling Precautions"