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參數(shù)資料
| 型號： | GHZ20060 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 130K |
| 代理商： | GHZ20060 |
Updated Feb 2001
GENERAL DESCRIPTION
The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts
of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is
specifically designed for
LINEAR
COMMUNICATIONS BASE STATION
amplifier applications. It includes single stage input and single output prematching. It
utilizes Gold metalization and EMITTER ballasting to provide high reliability and
supreme ruggedness. The GHz20060 is in the industry standard Beryllium Oxide
(BeO) package design to drop into existing applications.
CASE OUTLINE
55SW, STYLE 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
C 250 Watts
Maximum Voltage and Current
Bvceo Collector to Emitter Voltage 25 Volts
BVces Collector to Emitter Voltage 60 Volts
BVcbo Collector to Base Voltage 60 Volts
BVebo Emitter to Base Voltage 3 Volts
Ic Collector Current 8.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150
o
C
Operating Junction Temperature + 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Gpe
Rl
η
c
VSWR
1
IMD
Common Emitter Power
Gain
Return Loss
Collector Efficiency
Load Mismatch Tolerance
Intermodulation Distortion
F =2000 MHz
Vce = 26 Volts
Icq = 300 mAmps
60 Watts PEP
As above, except F2=2000.1
MHz
9.0
35
9.5
40
-10
3:1
-30
dB
dB
%
dBc
BVceo
BVces
BVcbo
BVebo
Ices
h
FE
θ
jc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
Reverse Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Thermal Resistance
Ic = 50 mA, Ib = 0 mA
Ic = 50 mA, Vbe = 0
Ic = 50 mA, Ie = 0 mA
Ib = 10 mA, Ic = 0 mA
Vce = 30 Vdc, Vbe = 0 Vdc
Vce = 5 V, Ic = 1.0 A
Tc = 25
o
C
25
60
60
3.0
20
10
100
.87
Volts
Volts
Volts
Volts
mA
o
C/W
Issue A, January 2000
GHz TECHNOLOGY, INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE
PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE
CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz20060
60 Watts PEP, 26 Volts, Class AB
1800 - 2000 MHz
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