參數(shù)資料
型號(hào): GLT5160L16P-7TC
廠商: Electronic Theatre Controls, Inc.
英文描述: 12 AMP MINIATURE POWER RELAY
中文描述: 1,600(2 -銀行甲524288字× 16位)同步DRAM
文件頁數(shù): 12/45頁
文件大小: 399K
代理商: GLT5160L16P-7TC
12
G-LINK Technology
DEC. 2003 (Rev. 2.4)
Write
After t
RCD
from the bank activation, a WRITE command can be
issued. 1st input data is set at the same cycle as the WRITE. Follow-
ing (BL-1) data are written into the RAM, when the Burst Length is
BL. The start address is specified by A[7:0], and the address
sequence of burst data is defined by the Burst Type. A WRITE com-
mand may be applied to any active bank, so the row precharge time
(t
RP
) can be hidden behind continuous input data (in case of BL = 4)
by interleaving the dual banks. From the last input data to the PRE
command, the write recovery time (t
RDL
) is required. When A[10]
is high at a WRITE command, the auto-precharge (WRITEA) is
performed. Any command (READ, WRITE, PRE, ACT) to the
same bank is inhibited till the internal precharge is complete. The
internal precharge begins at t
WR
after the last input data cycle. The
next ACT command can be issued after t
RP
from the internal pre-
charge timing.
CLK
Figure 7. Dual Bank Interleaving WRITE (BL=4)
Command
A[9:0]
A[10]
BA
DQ
t
RCD
t
RCD
Burst Length
Da1
t
RDL
(1
0
Da2
Da0
Da3
ACT
WRITE
ACT
PRE
WRITE
Xa
Y
Xb
Y
Xa
0
Xb
0
0
0
1
0
1
Db1
Db0
Db3
Db2
CLK
Figure 8. WRITE with Auto-Precharge (BL=4)
Command
A[9:0]
A[10]
BA
Internal Precharge Begins
DQ
t
RCD
t
RP
t
RDL
Da2
Da1
Da0
Da3
ACT
WRITE
ACT
Xa
Y
Xa
Xa
1
Xa
0
0
0
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