參數(shù)資料
型號： GM71C4400CR-80
廠商： LG Corp.
英文描述： 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
中文描述： 1,048,576字× 4位的CMOS動態(tài)隨機(jī)存儲器
文件頁數(shù)： 7/9頁
文件大?。?/td> 104K
代理商： GM71C4400CR-80
LG Semicon
GM71C(S)4400C/CL
7
Test Mode Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
WS
t
WH
Test Mode WE Setup Time
0
-
0
-
0
-
ns
Test Mode WE Hold Time
10
-
10
-
10
-
ns
Counter Test Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
CPT
CAS Precharge Time in Counter Test
Cycle
40
-
40
-
40
-
ns
AC Measurements assume t
T
= 5
ns
.
Assumes that t
RCD
<=t
RCD
(max) and t
RAD
<=t
RAD
(max). If t
RCD
or t
RAD
is greater than the maximum
recommended value shown in this table, t
RAC
exceeds the value shown.
Measured with a load circuit equivalent to 2TTL loads and 100
§ü
.
Assumes that t
RCD
>=t
RCD
(max) and t
RAD
<=t
RAD
(max).
Assumes that t
RCD
<=t
RCD
(max) and t
RAD
>=t
RAD
(max).
t
OFF
(max) defines the time at which the output achieves the open circuit condition and is not
referenced to output voltage levels.
V
IH
(min) and V
IL
(max) are reference levels for measuring timing of input signals. Also,
transition times are measured between V
IH
and V
IL
.
Operation with the t
RCD
(max) limit insures that t
RAC
(max) can be met, t
RCD
(max) is specified as a
reference point only; if t
RCD
is greater than the specified t
RCD
(max) limit, then access time is
controlled exclusively by t
CAC
.
Operation with the t
RAD
(max) limit insures that t
RAC
(max) can be met, t
RAD
(max) is specified as a
reference point only; if t
RAD
is greater than the specified t
RAD
(max) limit, then access time is
controlled exclusively by t
AA
.
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
GM71C(S)4400
C/CL-60
GM71C(S)4400
C/CL-70
GM71C(S)4400
C/CL-80
GM71C(S)4400
C/CL-60
GM71C(S)4400
C/CL-70
GM71C(S)4400
C/CL-80
相關(guān)PDF資料
PDF描述
GM71S4400CR-80 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71S4400C Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0161-9 00; No. of Positions: 12; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 3; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line plug; Straight; Panel lock
GM71S4400C-60 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0162-1 00; No. of Positions: 13; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 3; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line plug; Straight; Panel lock
GM71S4400C-70 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0163-4 00; No. of Positions: 14; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 3; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line plug; Straight; Panel lock
GM71S4400C-80 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0164-7 00; No. of Positions: 15; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 3; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line plug; Straight; Panel lock
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GM71C4400CT 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4400CT-60 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4400CT-70 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4400CT-80 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4400CZ-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
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