參數(shù)資料
型號: GM71C4403C-80
廠商: LG Corp.
英文描述: MB 26C 26#20 SKT PLUG RoHS Compliant: No
中文描述: 1,048,576字× 4位的CMOS動態(tài)隨機(jī)存儲器
文件頁數(shù): 6/10頁
文件大小: 108K
代理商: GM71C4403C-80
LG Semicon
GM71C4403C
6
Read- Modify-Write Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
Read-Modify-Write Cycle Time
-
159
-
183
-
ns
RAS to WE Delay Time
-
90
-
102
-
ns
CAS to WE Delay Time
-
38
-
42
-
ns
Column Address to WE Delay Time
-
55
-
62
-
ns
10
10
10
OE Hold Time from WE
-
18
-
20
-
ns
Refresh Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
CSR
CAS Set-up Time
(CAS-before-RAS Refresh Cycle)
10
-
10
-
10
-
ns
t
CHR
CAS Hold Time
(CAS-before-RAS Refresh Cycle)
10
-
10
-
10
-
ns
t
RPC
t
CPN
RAS Precharge to CAS Hold Time
10
-
10
-
10
-
ns
CAS Precharge Time in Normal Mode
10
-
13
-
15
-
ns
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
133
77
32
47
15
Write Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
Write Command Setup Time
0
-
0
-
0
-
ns
Write Command Hold Time
10
-
13
-
15
-
ns
Write Command Pulse Width
10
-
10
-
10
-
ns
Write Command to RAS Lead Time
10
-
13
-
15
-
ns
Write Command to CAS Lead Time
10
-
-
-
ns
13
15
Data-in Setup Time
0
-
-
-
ns
0
0
Data-in Hold Time
10
-
-
-
ns
13
15
11
11
10
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
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GM71C4403CJ-60 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
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