參數(shù)資料
型號: GM71C4403C
廠商: LG Corp.
英文描述: 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
中文描述: 1,048,576字× 4位的CMOS動態(tài)隨機存儲器
文件頁數(shù): 4/10頁
文件大?。?/td> 108K
代理商: GM71C4403C
LG Semicon
GM71C4403C
4
Read, Write, Read-Modify-Write and Refresh Cycles
(Common Parameters)
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ODD
t
DZO
t
DZC
Random Read or Write Cycle Time
104
-
124
-
144
-
ns
RAS Precharge Time
40
-
50
-
60
-
ns
RAS Pulse Width
60
10,000
70
10,000
80
10,000
ns
CAS Pulse Width
10
10,000
10,000
10,000
ns
13
15
Row Address Set-up Time
0
-
-
-
ns
0
0
Row Address Hold Time
10
-
-
-
ns
10
Column Address Set-up Time
0
-
-
-
ns
0
0
Column Address Hold Time
10
-
-
-
ns
13
15
RAS to CAS Delay Time
20
45
52
60
ns
20
20
8
RAS to Column Address Delay Time
15
30
35
40
ns
15
15
9
RAS Hold Time
15
-
-
-
ns
18
20
CAS Hold Time
48
-
-
-
ns
58
68
CAS to RAS Precharge Time
10
-
-
-
ns
10
10
t
T
Transition Time (Rise and Fall)
2
50
50
50
ns
2
2
7
t
REF
Refresh Period
-
16
16
16
ms
-
-
Capacitance
(V
CC
= 5V+/-10%, T
A
= 25C)
Symbol
Parameter
Note
C
I1
C
I2
C
I/O
¤
Input Capacitance (Address)
Input Capacitance (Clocks)
Data Input/Output Capacitance (Data-In/Out)
1
1
1, 2
Unit
§ü
§ü
§ü
Max
5
7
7
Min
-
-
-
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V
IH
to disable D
OUT
.
AC Characteristics
(V
CC
= 5V+/-10%, T
A
= 0 ~ 70C, Notes 1, 14, 15, 16)
Test Conditions
Input level : V
IL
=0V, V
IH
=3.0V
Input rise and fall times: 2ns
Input timing reference levels: V
IL
=0.8V, V
IH
=2.4V
OE to D
IN
Delay Time
15
-
-
-
ns
18
20
OE Delay Time from D
IN
0
-
-
-
ns
0
0
CAS Set-up Time from D
IN
0
-
-
-
ns
0
0
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
Output timing reference levels: V
OL
=0.8V, V
OH
=2.0V
Output load : 1 TTL gate + C
L
(100
§ü
)
(Including scope and jig)
10
19
20
22
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