參數(shù)資料
型號(hào): GM71C4403CR-70
廠商: LG Corp.
英文描述: LED Panel Indicator; Collar Shape:Round
中文描述: 1,048,576字× 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 108K
代理商: GM71C4403CR-70
LG Semicon
GM71C4403C
7
Test Mode Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
WS
t
WH
Test Mode WE Setup Time
0
-
0
-
0
-
ns
Test Mode WE Hold Time
10
-
10
-
10
-
ns
Counter Test Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
CPT
CAS Precharge Time in Counter Test
Cycle
40
-
40
-
40
-
ns
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
Extended Data Out (EDO) Mode Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
EDO Mode Cycle Time
25
-
30
-
35
-
EDO Mode CAS Precharge Time
100,000
100,000
100,000
EDO Mode RAS Pulse Width
-
35
-
40
-
45
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
-
-
45
-
12
3,13,17
10
13
15
-
-
-
EDO Read-Modify-Write Cycle CAS
Precharge to WE Delay Time
-
-
-
EDO Read-Modify-Write Cycle Time
66
-
77
-
86
-
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
35
52
40
60
t
COP
CAS Hold Time Referred OE
CAS to OE setup Time
Read Command Hold Time from
CAS Precharge
t
CP
t
RASP
t
ACP
t
RHCP
t
HPRWC
t
CPW
t
HPC
t
COL
t
RCHP
10
5
35
-
-
-
13
5
40
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
67
20
5
45
-
-
-
10
23
Output data hold time from CAS low
t
DOH
3
-
3
-
-
ns
3
相關(guān)PDF資料
PDF描述
GM71C4403CR-80 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4403C 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4403CJ 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4403CR 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4403CT 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GM71C4403CR-80 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4403CT 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4403CT-60 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4403CT-70 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
GM71C4403CT-80 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM