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參數(shù)資料
| 型號： | GM71C4403CR-80 |
| 廠商： | LG Corp. |
| 英文描述： | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| 中文描述： | 1,048,576字× 4位的CMOS動態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大小： | 108K |
| 代理商： | GM71C4403CR-80 |
LG Semicon
GM71C4403C
Either t
RCH
or t
RRH
must be satisfied.
t
RAS
(min) = t
RWD
(min) + t
RWL
(min) + t
T
in Read - Modify - Write cycle.
t
CAS
(min) = t
CWD
(min) + t
CWL
(min) + t
T
in Read - Modify - Write cycle.
t
OFF
and t
OFR
are determined by the later rising edge of RAS or CAS.
t
CSH
(min) can be achieved when t
RCD
<= t
CSH
(min) - t
CAS
(min).
18.
19.
20.
21.
22.
9
EDO Hi-Z control by OE or WE. OE rising edge disables data outputs. When OE goes high
during CAS high, the data will not come out until next CAS access. When WE goes low
during CAS high, the data will not come out until next CAS access.
t
HPC
(min) can be achieved during a series of EDO mode write cycles or EDO mode read
cycles. If both write and read operation are mixed in a EDO mode RAS cycle(EDO mode
mix cycle (1),(2) ) minimum value of CAS cycle (t
CAS
+ t
CP
+ 2t
T
) becomes greater than the
specified t
HPC
(min) value.The value of CAS cycle time of mixed EDO mode is shown in
EDO mode mix cycle (1) and (2).
23.
24.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GM71C4403C | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4403CJ | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4403CR | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4403CT | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4403CT-60 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GM71C4403CT | 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4403CT-60 | 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4403CT-70 | 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4403CT-80 | 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4403D | 制造商:LG 制造商全稱:LG 功能描述:1,048,576 Words x Bit Organization |
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