參數(shù)資料
型號(hào): GMBT9012
廠商: GTM CORPORATION
英文描述: PNP EPITAXIAL TRANSISTOR
中文描述: 進(jìn)步黨外延晶體管
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 230K
代理商: GMBT9012
1/2
G
G M
M B
B T
T 99001122
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A LL T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMBT9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0 C
10 C
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-20
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
V
IC=-100uA , IE=0
BVCEO
-20
-
V
IC=-1mA, IB=0
BVEBO
-5
-
V
IE=-100uA, IC=0
ICBO
-
-100
nA
VCE=-25V, IE=0
IEBO
-
-100
nA
VEB=-3V, IC=0
VCE(sat)
-
-0.6
V
IC=-500mA, IB=-50mA
VBE(sat)
-
-1.2
V
IC=-500mA, IB=-50mA
VBE(on)
-
-0.9
V
VCE=-1V, IC=-10mA
hFE1
112
180-
300
VCE=-1V, IC=-50mA
hFE2
40
-
VCE=-1V, IC=-500mA
fT
100
-
MHz
VCE=-1V, IC=-10mA, f=100MHz
Cob
-
8
pF
VCB=-10V, f=1MHz
Classification Of HFE1
Rank
G
H
L
hFE
112 - 166
144 - 202
176 - 300
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