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參數(shù)資料
| 型號(hào)： | GMPCR06 |
| 廠商： | GTM CORPORATION |
| 英文描述： | SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8A, 400V |
| 中文描述： | 敏感柵硅控整流器反向阻斷晶閘管0.8A分別為400V |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 227K |
| 代理商： | GMPCR06 |
GMPCR06
Page: 2/3
ISSUED DATE :2005/12/21
REVISED DATE :2006/03/29B
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Ambient
R JA
70
: /W
Lead Solder Temperature (< 1/16” from case, 10 secs max)
TL
260
:
Electrical Characteristics (TC = 25 : unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Peak Repetitive Forward or Reverse Blocking Current (Note2)
TC=25 :
(
VDRM=400V and VRRM=400V; RGK=1k )
TC=110 :
IDRM, IRRM
-
10
100
A
On Characteristics
Peak Forward On-State Voltage* (ITM=1A Peak @TA=25 : )
VTM
-
1.7
V
Gate Trigger Current (Continuous dc) (Note3)
TC=25 :
(VAK=7.0 Vdc, RL=100 )
IGT
-
50
100
A
Holding Current (Note2)
TC=25 :
(VAK=7.0 Vdc, Initiating Current=20mA)
TC=-40 :
IH
-
0.5
-
5.0
10
mA
Latch Current
TC=25 :
(VAK=7.0 Vdc, Ig=200 A)
TC=-40 :
IL
-
0.6
-
10
15
mA
Gate Trigger Voltage (Continuous dc) (Note3)
TC=25 :
(VAK=7.0 Vdc, RL=100 )
TC=-40 :
VGT
-
0.62
-
0.8
1.2
V
Dynamic Characteristics
Critical Rate of Rise of Off-State Voltage
(VD=400V, Exponential Waveform, RGK=1000 , TJ=110 : )
dV/dt
20
35
-
V/ s
Critical Rate of Rise of Off-State Current
(IPK=20AV, PW=10 sec; diG/dt=1A/ sec, Igt=20mA)
di/dt
-
50
A/ s
*Indicates Pulse Test: Pulse Width 1.0ms, Duty Cycle 1%.
Note 2.RGK=1000 included in measurement.
Note 3.Dose not include RGK in measurement.
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
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