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參數(shù)資料
| 型號： | GN4A4P |
| 廠商： | NEC Corp. |
| 英文描述： | RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| 中文描述： | 電阻內(nèi)置型PNP晶體管 |
| 文件頁數(shù)： | 6/22頁 |
| 文件大?。?/td> | 322K |
| 代理商： | GN4A4P |
Data Sheet D16490EJ2V0DS
6
GN4xxx
[GN4L4M]
TYPICAL CHARACTERISTICS (T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
I
C
0
2
4
6
8
10
50
40
30
20
10
0
240
190
140
90
40
I
B
=
290 A
V
CE
- Collector to Emitter Voltage - V
V
C
0
- 0.1
- 0.2
- 0.3
- 0.4
- 0.5
0
- 20
- 40
V
IN
= 5.0 V
10.0 V
15.0 V
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
h
F
10
100
1000
- 1
- 10
- 100
V
CE
=
5.0V
T
A
= 75°C
25°C
25°C
I
C
- Collector Current - mA
V
C
- 0.01
- 0.1
- 1
- 1
- 10
- 100
I
C
= 10 I
B
T
A
= 75°C
25°C
25°C
I
C
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs. INPUT VOLTAGE
V
I
- 0.1
- 1
- 10
- 100
- 1
- 10
- 100
V
CE
=
0.2 V
T
A
=
25°C
25°C
75°C
I
C
- Collector Current - mA
I
C
μ
A
- 1
- 10
- 100
- 1000
- 0.6
- 0.8
- 1
- 1.2
- 1.4
- 1.6
- 1.8
V
CE
=
5.0 V
T
A
= 75°C
25°C
25°C
V
IN
- Input Voltage - V
RESISTOR vs. AMBIENT TEMPERATURE
R
0
20
40
60
80
100
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
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| GN4A4M | RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GN4A4P-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| GN4A4Z | 制造商:NEC 制造商全稱:NEC 功能描述:RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| GN4A4Z-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| GN4F3M | 制造商:NEC 制造商全稱:NEC 功能描述:RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| GN4F3M-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
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