參數(shù)資料
型號(hào): GP2401ESM18
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 功率晶體管
英文描述: Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
中文描述: 2400 A, 1800 V, N-CHANNEL IGBT
文件頁(yè)數(shù): 5/9頁(yè)
文件大小: 152K
代理商: GP2401ESM18
GP2401ESM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/9
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
C
c
V
ge
= 20/15/12/10V
Commo
n emitter
T
case
= 25
C
600
1200
1800
3600
4200
4800
3000
2400
0
600
1200
1800
3600
4200
4800
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V
ce
- (V)
C
c
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125
C
3000
2400
0
1600
400
800
Collector current, I
C
- (A)
0
1.0
1.2
1.4
1.6
1.8
2.0
E
T
case
= 125C
V
GE
= 15V
V
CE
= 900V
R
G
= 2.2
L = 50nH
0.4
0.2
0.6
0.8
1200
2400
2000
E
REC
E
ON
E
OFF
0
4
1
2
Gate resistance, R
G
- (Ohms)
0
3.0
3.5
4.0
4.5
E
T
case
= 125C
V
GE
= 15V
V
CE
= 900V
I
C
= 2400A
L = 50nH
1.0
0.5
1.5
2.5
2.0
3
8
5
6
7
10
9
E
REC
E
OFF
E
ON
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