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參數(shù)資料
| 型號(hào)： | GP2L24J0000F |
| 廠(chǎng)商： | Sharp Corporation |
| 英文描述： | Detecting Distance : 0.7mm Darlington Phototransistor Output Compact Refl ective Photointerrupter |
| 中文描述： | 檢測(cè)距離：0.7毫米達(dá)林頓光電晶體管輸出緊湊Refl ective光電斷路器 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大小： | 160K |
| 代理商： | GP2L24J0000F |
9
Sheet No.: D3-A02301EN
GP2L24J0000F
■
Design Considerations
●
Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Distance characteristic
Please refer to Fig.11 (Relative collector current vs. Distance) to set the distance of the photointerrupter
and the object.
This product is not designed against irradiation and incorporates non-coherent IRED.
●
Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
●
Parts
This product is assembled using the below parts.
Photodetector (qty. : 1)
Category
Material
Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm)
Response time (
s)
Phototransister
Silicon (Si)
800
700 to 1 200
80
Photo emitter (qty. : 1)
Category
Material
Maximum light emitting
wavelength (nm)
I/O Frequency (MHz)
Infrared emitting diode
(non-coherent)
Gallium arsenide (GaAs)
950
0.3
Material
Case
Lead frame
Lead frame plating
Black polyphenylene
42Alloy
SnCu plating
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