參數(shù)資料
型號: GS1K-L
廠商: MICROSEMI CORP
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
封裝: SMAJ, 2 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 117K
代理商: GS1K-L
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax:
(818) 701-4939
GS1A-L
THRU
GS1M-L
1 Amp
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ)
Features
For Surface Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250
°C for 10 Seconds At Terminals
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.078
.095
1.98
2.42
1
B
.081
.087
2.06
2.21
C
---
.005
---
.127
D
---
.02
---
.51
E
.030
.060
.76
1.52
F
.065
.084
1.65
2.13
G
.194
.220
4.93
5.59
H
.157
.177
3.99
4.50
J
.100
.110
2.57
2.79
Maximum Ratings
Operating Temperature: -65
°C to +175°C
Storage Temperature: -65
°C to +175°C
Maximum Thermal Resistance; 15
°C/W Junction To Lead
Microsemi
Part
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
GS1A-L
GS1A
50V
35V
50V
GS1B-L
GS1B
100V
70V
100V
GS1D-L
GS1D
200V
140V
200V
GS1G-L
GS1G
400V
280V
400V
GS1J-L
GS1J
600V
420V
600V
GS1K-L
GS1K
800V
560V
800V
GS1M-L
GS1M
1000V
700V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
current
IF(AV)
1.0A
TJ = 75
°C
Peak Forward Surge
Current
IFSM
30A
8.3ms, half sine,
TJ = 150
°C
Maximum
Instantaneous
Forward Voltage
VF
1.1V
IFM = 1.0A;
TJ = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
10
A
50
A
TJ = 25
°C
TJ = 125
°C
Maximum Reverse
Recovery Time
Trr
1.8
s
IF=0.5A, IR=1.0A,
Irr=0.25A
Typical Junction
Capacitance
CJ
15pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300
sec, Duty cycle 2%
0.075”
0.085”
0.095
SUGGESTED SOLDER
PAD LAYOUT
H
J
E
F
G
A
B
D
C
Cathode Band
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