參數(shù)資料
型號(hào)： GS72108TP-15
廠商： Electronic Theatre Controls, Inc.
英文描述： 256K x 8 2Mb Asynchronous SRAM
中文描述： 256K × 8的2Mb異步SRAM
文件頁(yè)數(shù)： 4/12頁(yè)
文件大?。?/td> 364K
代理商： GS72108TP-15
Rev: 1.08 7/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
4/12
1999, Giga Semiconductor, Inc.
GS72108TP/J
Note:
1.
2.
Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Notes:
1.
2.
Tested at T
A
= 25°C, f = 1 MHz
These parameters are sampled and are not 100% tested.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -10/12/15
V
DD
3.0
3.3
3.6
V
Supply Voltage for -8
V
DD
3.135
3.3
3.6
V
Input High Voltage
V
IH
2.0
—
V
DD
+0.3
V
Input Low Voltage
V
IL
–
0.3
—
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
—
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
–
40
—
85
o
C
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
= 0 V
5
pF
Output Capacitance
C
OUT
V
OUT
= 0 V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
I
IL
V
IN
= 0 to V
DD
–
1 uA
1 uA
Output Leakage
Current
I
LO
Output High Z
V
OUT
= 0 to V
DD
–
1 uA
1 uA
Output High Voltage
V
OH
I
OH
= –4mA
2.4
—
Output Low Voltage
V
OL
I
LO
= +4mA
—
0.4 V
相關(guān)PDF資料
PDF描述
GS72108TP-15I 256K x 8 2Mb Asynchronous SRAM
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