參數(shù)資料
型號: GS73024AB-8I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: Asynchronous SRAM
中文描述: 128K X 24 STANDARD SRAM, 8 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件頁數(shù): 5/12頁
文件大?。?/td> 452K
代理商: GS73024AB-8I
DQ
VT = 1.4 V
50
30pF
1
DQ
3.3 V
Output Load 1
Output Load 2
589
434
5pF
1
Notes:
1.
2.
Includes scope and jig capacitance
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted
Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
3.
Parameter
Conditions
Input high level
V
IH
= 2.4 V
Input low level
V
IL
= 0.4 V
Input rise time
t = 1 V/ns
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output reference level
1.4 V
Output load
Fig. 1& 2
GS73024AB
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 12/2005
5/12
2003, GSI Technology
AC Test Conditions
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70°C
–40 to 85°C
8 ns
10 ns
12 ns
8 ns
10 ns
12 ns
Operating
Supply
Current
I
DD
CE
V
IL
All other inputs
V
IH
or
V
IL
Min. cycle time
I
OUT
= 0 mA
250 mA
200 mA
170 mA
260 mA
210 mA
180 mA
Standby
Current
I
SB1
CE
V
IH
All other inputs
V
IH
or
V
IL
Min. cycle time
40 mA
40 mA
30 mA
50 mA
50 mA
40 mA
Standby
Current
I
SB2
CE
V
DD
- 0.2V
All other inputs
V
DD
- 0.2V or
0.2V
10 mA
20 mA
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