參數(shù)資料
型號(hào): GS74108AGJ-10
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 8 4Mb Asynchronous SRAM
中文描述: 512K X 8 STANDARD SRAM, 10 ns, PDSO36
封裝: 0.400 INCH, ROHS COMPLIANT, SOJ-36
文件頁數(shù): 8/13頁
文件大?。?/td> 403K
代理商: GS74108AGJ-10
t
WC
Address
CE
WE
Data In
OE
Data Out
t
AW
t
WP
t
AS
t
CW
t
WR1
t
DW
t
DH
D
ATA
VALID
H
IGH
IMPEDANCE
GS74108ATP/J/X
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07 1/2006
8/13
2001, Giga Semiconductor, Inc.
Write Cycle 2: CE control
1
e
B1
D
A
A
y
E
H
E
Q
c
L
G
E
Detail A
A
B
A
Notes:
1. Dimension D& E do not include interlead flash.
2. Dimension B1 does not include dambar protrusion/intrusion.
Symbol
Dimension in inch
min
nom
0.026
0.105
0.110
0.013
0.017
0.024
0.028
0.006
0.008
0.920
0.924
0.395
0.400
0.05
0.430
0.435
0.354
0.366
0.082
Dimension in mm
min
nom
0.66
2.67
2.80
0.33
0.43
0.61
0.71
0.15
0.20
23.37
23.47
10.04
10.16
1.27
10.93
11.05
9.00
9.30
2.08
max
0.146
0.115
0.021
0.032
0.012
0.929
0.405
0.440
0.378
0.004
max
3.70
2.92
0.53
0.81
0.30
23.60
10.28
11.17
9.60
0.10
A
A1
A2
B
B1
c
D
E
e
H
E
G
E
L
y
Q
0
o
10
o
0
o
10
o
36-Pin SOJ, 400 mil
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