參數(shù)資料
型號(hào): GS74108AGX-12
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 512K x 8 4Mb Asynchronous SRAM
中文描述: 512K X 8 STANDARD SRAM, 12 ns, PBGA48
封裝: 6 X 10 MM, ROHS COMPLIANT, FBGA-48
文件頁(yè)數(shù): 4/13頁(yè)
文件大?。?/td> 403K
代理商: GS74108AGX-12
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
V = 0 V
IN
5
pF
Output Capacitance
C
V
= 0 V
7
pF
GS74108ATP/J/X
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07 1/2006
4/13
2001, Giga Semiconductor, Inc.
Notes:
1.
2.
Tested at T
A
= 25°C, f = 1 MHz
These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
I
IL
V
IN
= 0 to V
DD
– 1 uA
1 uA
Output Leakage
Current
I
LO
Output High Z
V
OUT
= 0 to V
DD
–1 uA
1 uA
Output High Voltage
V
OH
I
= –4 mA
2.4
Output Low Voltage
V
OL
I
= +4 mA
0.4 V
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70°C
–40 to 85°C
8 ns
10 ns
12 ns
8 ns
10 ns
12 ns
Operating
Supply
Current
I
CE
V
All other inputs
V or
V
Min. cycle time
I
= 0 mA
OUT
120 mA
95 mA
85 mA
130 mA
105 mA
95 mA
Standby
Current
I
CE
V
All other inputs
V or
V
Min. cycle time
30 mA
25 mA
22 mA
40 mA
35 mA
32 mA
Standby
Current
I
CE
V - 0.2V
All other inputs
V - 0.2V or
0.2V
DD
10 mA
20 mA
IN
OUT
OUT
OH
LO
DD
IL
IH
IL
SB1
IH
IH
IL
SB2
DD
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