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參數(shù)資料
| 型號： | GS74108AX-8 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 4Mb Asynchronous SRAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 8 ns, PBGA48 |
| 封裝： | 6 X 10 MM, FBGA-48 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 403K |
| 代理商： | GS74108AX-8 |
Truth Table
CE
OE
WE
DQ
1
to DQ
8
V
DD
Current
H
X
X
Not Selected
ISB
1
, ISB
2
L
L
H
Read
I
DD
L
X
L
Write
L
H
H
High Z
GS74108ATP/J/X
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07 1/2006
3/13
2001, Giga Semiconductor, Inc.
Note:
X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
–0.5 to +4.6
V
Input Voltage
V
IN
–0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Output Voltage
V
OUT
–0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
–55 to 150
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8/-10/-12
V
DD
3.0
3.3
3.6
V
Input High Voltage
V
IH
2.0
—
V
DD
+0.3
V
Input Low Voltage
V
IL
–0.3
—
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
—
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
–40
—
85
o
C
Notes:
1.
2.
Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
相關(guān)PDF資料 |
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| GS76024AB | 256K x 24 6Mb Asynchronous SRAM |
| GS76024AB-10 | 256K x 24 6Mb Asynchronous SRAM |
| GS816118 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS74108AX-8I | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 512KX8 8NS 48FBGA - Trays |
| GS74108J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108J-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108J-10I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108J-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 8 4Mb Asynchronous SRAM |
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