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參數(shù)資料
| 型號(hào)： | GS78108AGB-12IT |
| 廠(chǎng)商： | GSI TECHNOLOGY |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 1M X 8 STANDARD SRAM, 12 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 351K |
| 代理商： | GS78108AGB-12IT |
GS78108AB
1M x 8
8Mb Asynchronous SRAM
8, 10, 12 ns
3.3 V VDD
BGA
Commercial Temp
Industrial Temp
Rev: 1.04a 2/2007
1/12
2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Features
Fast access time: 8, 10, 12 ns
CMOS low power operation: 240/190/170 mA at minimum
cycle time
Single 3.3 V ± 0.3 V power supply
All inputs and outputs are TTL-compatible
Fully static operation
Industrial Temperature Option: –40° to 85°C
14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array
package
RoHS-compliant package available
Description
The GS78108A is a high speed CMOS Static RAM organized
as 1,048,576-words by 8-bits. Static design eliminates the need
for external clocks or timing strobes. The GS78108operates on
a single 3.3 V power supply, and all inputs and outputs are
TTL-compatible. The GS7810A8 is available in a
14 mm x 22 mm BGA package.
Symbol
Description
A0 to A19
Address input
DQ1 to DQ8
Data input/output
CE
Chip enable input
WE
Write enable input
OE
Output enable input
VDD
+3.3 V power supply
VSS
Ground
NC
No connect
Pin Descriptions
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Buffer
Control
I/O Buffer
A0
CE
WE
OE
DQ1
A19
DQ8
Block Diagram
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