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參數(shù)資料
| 型號： | GS78116B-15T |
| 英文描述： | x16 SRAM |
| 中文描述： | x16的SRAM |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 369K |
| 代理商： | GS78116B-15T |
Rev: 1.02 9/2001
For latest documentation see http://www.gsitechnology.com.
3/11
1999, Giga Semiconductor, Inc.
GS78116B
Note: X: “H” or “L”
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Notes:
1.
2.
Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Truth Table
CE
OE
WE
DQ
1
to DQ
8
V
DD
Current
H
X
X
Not Selected
ISB1, ISB2
L
L
H
Read
L
X
L
Write
I
DD
L
H
H
High Z
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
–0.5 to +4.6
V
Input Voltage
V
IN
–0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Output Voltage
V
OUT
–0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Allowable power dissipation
PD
1.5
W
Storage temperature
T
STG
–55 to 150
o
C
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -10/12/15
V
DD
3.0
3.3
3.6
V
Input High Voltage
V
IH
2.0
—
V
DD
+0.3
V
Input Low Voltage
V
IL
–0.3
—
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
—
70
o
C
Ambient Temperature,
Industrial Range
T
Ai
–40
—
85
o
C
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