參數(shù)資料
型號(hào): GS8160E18AT-300
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 18 CACHE SRAM, 5 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 22/23頁(yè)
文件大?。?/td> 482K
代理商: GS8160E18AT-300
Rev: 1.03a 5/2003
8/23
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8160E18/32/36AT-300/250/200/150
Preliminary
Byte Write Truth Table
Note:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x32 and x36 versions.
Function
GW
BW
BA
BB
BC
BD
Notes
Read
H
X
1
Read
H
L
HHHH
1
Write byte a
H
L
H
2, 3
Write byte b
H
L
H
L
H
2, 3
Write byte c
H
L
H
L
H
2, 3, 4
Write byte d
H
L
H
L
2, 3, 4
Write all bytes
H
LLLLL
2, 3, 4
Write all bytes
L
XXXX
X
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