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參數(shù)資料
| 型號： | GS8160V36BGT-150I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 |
| 封裝： | LEAD FREE, TQFP-100 |
| 文件頁數(shù)： | 6/23頁 |
| 文件大小： | 593K |
| 代理商： | GS8160V36BGT-150I |
GS8160V18/32/36BT-250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
14/23
2004, GSI Technology
AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–1 uA
1 uA
ZZ Input Current
IIN1
VDD ≥ VIN ≥ VIH
0 V
≤ VIN ≤ VIH
–1 uA
1 uA
100 uA
FT Input Current
IIN2
VDD ≥ VIN ≥ VIL
0 V
≤ VIN ≤ VIL
–100 uA
–1 uA
1 uA
Output Leakage Current
IOL
Output Disable, VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH1
IOH = –4 mA, VDDQ = 1.6 V
VDDQ – 0.4 V
—
Output Low Voltage
VOL1
IOL = 4 mA, VDD = 1.6 V
—
0.4 V
DQ
VDDQ/2
50
30pF*
Output Load 1
* Distributed Test Jig Capacitance
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| GS8160V36CGT-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V36CGT-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V36CGT-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V36CGT-300I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8160V36CGT-333 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
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