參數(shù)資料
型號: GS816272C-133
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
中文描述: 256K X 72 CACHE SRAM, 8.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 15/41頁
文件大小: 980K
代理商: GS816272C-133
Tex8adx6prsi hsseiiainaeNtRcmmne o NwDsg.
GS816218(B/D)/GS816236(B/D)/GS816272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.17 11/2004
15/41
1999, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
W
CR
CW
X
X
W
W
X
X
X
CR
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關PDF資料
PDF描述
GS816272C-133I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816272C-150 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816272C-150I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816272C-166 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816272C-166I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
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